The Cardiff large-signal model uses Fourier series coefficient functions that vary with the magnitude of the large signal(s) as the PHD model describing functions. The X-parameter model will be seen as the first-order Taylor series approximation of the PHD model describing functions around a Large Signal Operating Point (LSOP) of the device under test. The mathematical formulation of the X-parameter and Cardiff models will be discussed in order to provide a theoretical ground for comparing their robustness. Each model formulates the describing functions of the general PHD model differently. Two popular implementations of PHD models that can be found in the literature are the X-parameter and Cardiff models. A PHD model will be seen as a set of describing functions that predict the response of the Device Under Test (DUT) for any given non-linear periodic continuous-wave inputs that have a specific fundamental frequency. This analysis will be performed by deriving the PHD modeling framework as a simplification of the Volterra series kernel functions under the assumption that the power transistor is operating under continuous periodic multi-harmonic voltage and current signals in a stable circuit. Specifically, the PHD framework cannot necessarily predict the response of a broadband aperiodic signal. This thesis describes the capabilities of the PHD modeling framework and the theoretical type of behaviour that it is capable of predicting. These models promise a good prediction of the device behaviour under multi-harmonic periodic continuous wave inputs. In recent years, a certain class of large signal frequency-dependent black-box behavioural modeling techniques known as Poly-Harmonic Distortion (PHD) models has been devised to mimic the non-linear unmatched RF transistor. The following sections give more detail about the device structure and performance characteristics, and compare these transistors to conventional superjunction (SJ) MOSFETs.The design of power amplifiers within a circuit simulator requires a good non-linear model that accurately predicts the electormagnetic behaviour of the power transistor. Infineon’s CoolGaN™ is made with a self-clamping p-gate structure that additionally solves the problem of gate Over Voltage (OV) sensitivity found in reverse-Schottky p-gate GaN transistors manufactured by others. By adding a p-type gate, however, the threshold voltage is increased from a negative to a positive voltage, thus making an enhancement-mode (normally off) transistor. The lateral transistor structure features very low gate and output charge, fast switching, and no body diode or reverse recovery charge.Īs a result of these characteristics, CoolGaN™ transistors can be used to design very high-efficiency and high-frequency power-conversion circuits, especially in topologies like half-bridge where conventional Si MOSFETs do not perform well because of their very large reverse recovery charge.Ī native GaN transistor has a depletion-mode gate, meaning it has a normally on characteristic, making it unsuitable for power electronic applications by itself. The active region of the transistor is fabricated using GaN and AlGaN semiconductor materials grown on top of a Si substrate. Qualified for standard grade applications according to JEDECĬoolGaN™ is a high-performance transistor technology for power conversion in the voltage range up to 600V. Enhancement mode transistor – normally OFF switch.Using the IGT60R190D1S can: improve system efficiency improve power density enable higher operating frequency reduce system costs and reduce electromagnetic interference. It addresses datacom and server and telecom power supplies, as well as adapter, charger, wireless charging and numerous other applications that demand highest efficiency or power density. The gallium nitride CoolGaN™ 600V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. The IGT60R190D1S CoolGaN™ 600V e-mode power transistor from Infineon delivers fast turn-on and turn-off speed, minimum switching losses and enables simple half bridge topologies with highest efficiency.
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